It can also perform well on low voltage due to which it is an ideal MOSFET to use in portable and battery operated applications. It is able to perform fast switching and capable to switch load in around 7 nanoseconds due to which it can be used in high speed circuits. When used as switch it can drive load of 500mA. It can be used for both switching and amplification purposes. Max Storage & Operating temperature Should Be: -55 to +150 CelsiusĢN7000, 2N7002, IRFZ44 (The pin configurations of the substitute MOSFETs shown here may be different from BS170, therefore it is recommended to check their pin configurations before replacing in your circuit).īS170 is a well-known N channel MOSFET manufactured in TO-92 package.Minimum Voltage Required to Conduct: 0.8V.Max Gate to Source Voltage Should Be: ± 20V.Max Voltage Applied From Drain to Source: 60V.If you are designing a PCB or Perf board with this component then the following picture from the IRF840 Datasheet will be useful to know its package type and dimensions. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor.
Hence this mosfet cannot be used in applications where high switching efficiency is required. One considerable disadvantage of the IRF840 Mosfet is its high on-resistance (RDS) value which is about 0.85 ohms. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU.
The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin.
The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. Note: Complete technical details can be found at the IRF840 datasheet linked at the bottom of the page Rise time and fall time is 23nS and 20nS.Drain Source Resistance (RDS) is 0.85 Ohms.Gate threshold voltage (VGS-th) is 10V (limit = ☒0V).The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin.Ĭurrent flows out through Source (maximum 8A)Ĭontrols the biasing of the MOSFET (Threshold voltage 10V)
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